Optimization of Anodic Silicon Oxide Films for Low Temperature Passivation of Silicon Surfaces

Abstract

Electrochemical and electrophysical methods are used for optimizing anodic oxide films as passivating layers for electronic devices. Under certain conditions the electrophysical properties of thermally and anodically grown films are practically identical. For several years such anodic oxide films have been applied for passivation of electron detectors with very‐high‐resistivity starting material (10–30 kΩ‐cm), which forms a part of the Zeiss Jena electron‐beam inspection system ZRM20 for the measurement of material and topography contrast in electron beam lithography.