Lateral field emission diodes using SIMOX wafer

Abstract

Lateral field emission diodes were fabricated by using separation by implantation of oxygen (SIMOX) wafer and their current-voltage characteristics (I-V) were analyzed. Applying conventional photolithography and local oxidation of silicon (LOGOS) process, we fabricated single-crystalline lateral silicon field emitters with very sharp cathode and anode tips and very short cathode to anode spacing ranging from 0.3 to 0.8 /spl mu/m as well. Two different types of tips, tapered and wedge-shaped emitters, were typically formed according to oxidation time. The turn-on voltages for both types of diodes were as low as 22/spl sim/25 V and the emission currents were as high as 6 /spl mu/A/tip at voltages of 35/spl sim/38 V. From the Fowler-Nordheim (FN) equation, field emitting area (A) and field enhancement factor (/spl beta/) for both types of diodes were estimated to explain the low turn-on voltages and the high emission currents.