2011 · 16 citations · 5 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesIii-v SemiconductorsPhotodetectorsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsDevice FabricationGain BandwidthGain-bandwidth ProductHeterojunction Bipolar TransistorsHeterojunction PhotodetectorsHeterostructure DevicesIntegrated PhotodetectorsPhototransistors
We present the design and characterization of SiGe Heterojunction Phototransistors using an 80GHz commercial SiGe Bipolar process. It is shown that 50μm HPTs are exhibits highest gain.bandwidth product of 0.8GHz.A/W compared to the 10μm HPTs.
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