Optical absorption coefficient determination and physical modelling of strained SiGe/Si photodetectors

Abstract

A physical model of the absorption in strained-SiGe on Si layers based on the one-photon MacFarlane model is investigated. Temperature variations are included as well as germanium context effect on parameters of the model. Results are compared to existing data and then are injected in a numerical-simulation-software. First optical simulations on strained SiGe photodiode are therefore performed which open the way to better understanding and optimisations of SiGe-based optoelectronic devices.