High performance CMOS dual supply level shifter for a 0.5V input and 1V output in standard 1.2V 65nm technology process

Abstract

This paper presents the design of a highly efficient CMOS level shifter qc-level shifter. Unlike many recent level shifters, the proposed qc-level shifter does not use bootstrap capacitors to minimize active area. When implemented on a 65 nm CMOS technology, under the large capacitive loading condition (2pF), qc-level shifter has a lower active area (94%), and energy-delay product (21.4%) than the reference bootstrap level shifter circuit (ts-level shifter). In comparison to a conventional shifter (c-level shifter)the corresponding reductions are 9.5% and 55%, respectively. Also qc-level shifter has very small effective input capacitance in comparison with ts-level shifter as it does not need a bootstrap capacitor connected to its input.