Investigations of Hydrogen Implanted GaP Single Crystals by Means of Particle Induced γ-Spectroseopy, Infrared Spectroscopy, and Rutherford Backscattering Channelling Technique

Abstract

The incorporation of hydrogen into GaP single crystals bombarded with 0.3 and 1.0 MeV protons it investigated in the fluence range to 1018 cm−2. The combination of infrared spectroscopy and trarticle induced γ-spectroscopy with the Rutherford backscattering channelling technique enables to study hydrogen incorporation, hydrogen trapping, and lattice damage and to determine the satio of the chemically bonded to the total incorporated amount of hydrogen dependent on the defect profile. The use of the ion beam etching technique allows the investigation of depth profiles within larger depth regions.