Publication | Closed Access
Annealing Behavior of a Proton Irradiated Al Ga N/GaN High Electron Mobility Transistor Grown by MBE
23
Citations
6
References
2000
Year
Unknown Venue
Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium NitrideGan Power Device
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