Model for hysteresis and kink behavior of MOS transistors operating at 4.2 K

Abstract

The hysteresis and kink characteristics of MOS transistors (MOSTs) operating at 4.2 K have been investigated. The response time of a MOST depends exponentially on the inverse of the drain voltage. A model is proposed that explains both the transient and kink behavior of the devices. It is based on the forced formation of the depletion layer caused by the avalanche-generated substrate current. The model is compared with previous models published in the literature.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>