CMOS TFT Op-Amps: Performance and Limitations

Abstract

In this letter, we demonstrate the feasibility of building thin-film transistor (TFT) complementary metal-oxide-semiconductor (CMOS) operational amplifiers (op-amps) at low temperature (180°C) for large-area sensor applications. The classic two-stage Miller-compensated CMOS design is built using a-Si:H and pentacene TFTs. In addition, we have studied the impact of electrical stress-induced aging of TFTs on op-amp performance using two different kinds of biasing circuits.