Epitaxial Growth of PbS Thin Films from Aqueous Solution

Abstract

Chemical deposition of from aqueous solutions has been studied using a reaction of and with excess . The growth rate was measured as a function of temperature and concentrations of and using glass substrates. It is found that the incubation time depends on temperature and concentration. Epitaxial growth of on Ge(100) and substrates is confirmed by means of the Laue back reflection x‐ray and the electron channeling patterns. The best surface morphology is obtained on the epitaxial film grown on substrate at 298 K with the concentrations of and at 0.57 and 0.4 M/liter, respectively.