Fabrication and characterization of monolithically integrated microchannel plates based on amorphous silicon

Andrea Franco, Jonas Geissbühler, N. Wyrsch, Christophe Ballif

Scientific Reports · 2014 · 21 citations · 32 references

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TL;DR

Microchannel plates are vacuum‑based electron multipliers used for photon detection, offering large signal amplification, wide active area, micrometric spatial resolution, and picosecond temporal resolution. This work introduces the first microchannel plate fabricated from hydrogenated amorphous silicon (a‑Si:H) rather than lead glass. The authors deposit an 80–120 µm stress‑controlled a‑Si:H layer at ~200 °C, dry‑etch micromachined channels, and integrate the plates vertically on metallic anodes to demonstrate monolithic integration with application‑specific integrated circuits. The resulting AMCPs achieve an electron multiplication factor exceeding 30 at an aspect ratio of 12.5:1 for photoelectron currents up to 100 pA under continuous illumination, confirming a‑Si:H’s ability to replenish electrons during multiplication.

Abstract

Microchannel plates are vacuum-based electron multipliers for particle—in particular, photon— detection, with applications ranging from image intensifiers to single-photon detectors. Their key strengths are large signal amplification, large active area, micrometric spatial resolution and picosecond temporal resolution. Here, we present the first microchannel plate made of hydrogenated amorphous silicon (a-Si:H) instead of lead glass. The breakthrough lies in the possibility of realizing amorphous silicon-based microchannel plates (AMCPs) on any kind of substrate. This achievement is based on mastering the deposition of an ultra-thick (80–120 μm) stress-controlled a-Si:H layer from the gas phase at temperatures of about 200°C and micromachining the channels by dry etching. We fabricated AMCPs that are vertically integrated on metallic anodes of test structures, proving the feasibility of monolithic integration of, for instance, AMCPs on application-specific integrated circuits for signal processing. We show an electron multiplication factor exceeding 30 for an aspect ratio, namely channel length over aperture, of 12.5:1. This result was achieved for input photoelectron currents up to 100 pA, in the continuous illumination regime, which provides a first evidence of the a-Si:H effectiveness in replenishing the electrons dispensed in the multiplication process.

References

32