IEEE Transactions on Microwave Theory and Techniques · 2010 · 72 citations · 15 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave Semiconductor DevicesPower AmplifiersRadio-frequency Integrated CircuitsCoplanar WaveguidesCouplersHigh-gain AmplifiersMillimeter-wave Integrated CircuitsPower Amplifier DesignPower OutputSmall-signal GainSolid-state Power Amplifiers
In this paper, we demonstrate a packaged sub-millimeter wave solid-state power amplifier (SSPA). The SSPA is implemented in coplanar waveguide (CPW) and uses an advanced high <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> InP HEMT transistor with a sub 50-nm gate. A monolithically integrated CPW dipole-to-waveguide transition eliminates the need for wirebonding and additional substrates. On-chip compact tandem couplers are used for power combining. The amplifier demonstrates 15-dB small-signal gain at 340 GHz. Peak saturated output power of 10 mW at 338 GHz is obtained at the waveguide flange out-put for the SSPA module.
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