IEEE Electron Device Letters · 1992 · 83 citations · 4 references
EngineeringElectrical EngineeringPhysicsElectronic MaterialsMicroelectronicsSemiconductor DevicesElectron TransportHigh-frequency Semiconductor DevicesMicrowave Semiconductor DevicesTwo-dimensional SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsBreakdown VoltageDepletion RegionFermi LevelSchottky Barrier DiodesSchottky BarriersSchottky ContactsSeries ResistanceTwo-dimensional Electron Gases
A high-frequency diode is proposed for use as a frequency multiplier element in the millimeter- and submillimeter-wavelength regions. The Schottky/2-DEG diode utilizes a Schottky contact along the edge of a two-dimensional electron gas (2-DEG) structure. This geometry allows one to combine a very low series resistance due to the excellent transport properties of the 2-DEG with a high breakdown voltage caused by the 2-D electric field spreading in the depletion region (compared to a 1-D field variation in the conventional Schottky diode). The higher Fermi velocity of the 2-DEG leads to a less severe transit-time limitation of the frequency response.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Journal of the Franklin Institute · 1963 · 333 citations
High efficiency submillimeter frequency multipliers
N. R. Erickson · 2002 · 118 citations