Growth Mechanism of Truncated Triangular III–V Nanowires

Abstract

What's in a wire? To determine the fundamental reason for obtaining tapered nanowires, GaAs nanowires were grown on {111}B GaAs substrates. Their novel structural characteristics (e.g., a truncated triangular cross section at the base of the nanowires; see image) were carefully investigated using high-resolution SEM and various TEM techniques. Based on the obtained structural characteristics of these nanowires and the growth environment, an asymmetrical lateral-growth mechanism has been identified.