Mobility-field behavior of fully depleted SOI MOSFET's

Abstract

This work reports measured effective mobility vs. effective vertical electric field and the accompanying experimental method of extraction for the fully depleted (FD) SOI MOSFET. The effective channel mobility vs. effective vertical electric field behavior was investigated as a function of the SOI film doping concentration, the SOI back-gate bias, and the SOI film thickness. The validity of using the approximation, Q/sub i/=C/sub ox/(V/sub GS//spl minus/V/sub TH/), for the inversion charge density in FD SOI is examined and experimentally confirmed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>