Growth of Gan on Porous Sic Substrates by Plasma-Assisted Molecular Beam Epitaxy - Concepedia

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Growth of Gan on Porous Sic Substrates by Plasma-Assisted Molecular Beam Epitaxy

DOI Full Paper Access

19

Citations

9

References

2002

Year

C. K. Inoki, T. S. Kuan, C. D. Lee, Ashutosh Sagar, R. M. Feenstra

MRS Proceedings

Materials EngineeringMaterials ScienceSemiconductor TechnologyWide-bandgap SemiconductorEngineeringSurface ScienceApplied PhysicsAluminum Gallium NitrideGan Power DevicePorous Sic Substrates

References

	Year	Citations

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