IEEE Journal of Solid-State Circuits · 2004 · 33 citations · 14 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesAnalog Integrated CircuitsHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave OscillatorsOscillatorsRadio-frequency Integrated CircuitsImpedance TransformationOn-chip Transmission LinesOscillator CircuitsPhase NoisePower OutputRadio-frequency Integrated Circuit DesignVoltage-controlled Oscillator DesignVoltage-controlled Oscillators
In this paper, two fully integrated voltage-controlled oscillators (VCOs) in a 200-GHz f/sub T/ SiGe bipolar technology are presented. The oscillators use on-chip transmission lines at the output for impedance transformation. One oscillator operates up to 98 GHz and achieves a phase noise of -85dBc/Hz at an offset frequency of 1 MHz. It can be tuned from 95.2 to 98.4 GHz and it consumes 12 mA from a single -5-V supply. The second oscillator operates from 80.5 GHz up to 84.8 GHz with a phase noise of -87dBc/Hz at 1-MHz offset frequency. The output power of both circuits is about -6dBm.
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SiGe bipolar technology with 3.9 ps gate delay