Enhanced P3HT OTFT Transport Performance Using Double Gate Modulation Scheme

Abstract

Electrical properties of single-gated (bottom-gated or top-gated) and double-gated (DG) organic thin-film transistors (OTFTs) are systematically investigated in terms of threshold voltage ( <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> ), subthreshold slope, and <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON/OFF</sub> . We found that the device structure has significant impacts on the aforementioned electrical properties and the operation modes in a poly-3-hexyl thiophene DG OTFT. An empirical electrostatic potential model is employed to describe well <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> behaviors of DG OTFTs in different modulation schemes. In addition, selective active-area coating in OTFTs is realized using an inkjet printing process, and consequently, parasitic leakage is much suppressed.