Chemical Vapor Deposition of Copper: Use of a Molecular Inhibitor to Afford Uniform Nanoislands or Smooth Films

Abstract

We report a method to control the surface morphology of thin copper films during growth by chemical vapor deposition from the precursor Cu(hfac)VTMS. A molecular inhibitor – an additive that modifies the surface attachment kinetics but does not decompose and contribute impurity atoms to the film – is added during the nucleation and/or growth stages of the film. Here we show that the reaction by-product VTMS can serve as such an inhibitor. If the inhibitor is added during the nucleation stage, when bare substrate surface is still exposed, the inhibitor greatly reduces the rate of coalescence and promotes the formation of a large density of uniformly-sized copper islands. Alternatively, if the film is allowed to nucleate in the absence of the inhibitor, subsequent addition of the inhibitor leads to a continuous copper film that is remarkably smooth on the nm scale.