A novel selective SiGe epitaxial growth technology for self-aligned HBTs

Abstract

A selective epitaxial growth (SEG) technology using Si/sub 2/H/sub 6/+GeH/sub 4/+Cl/sub 2/ under cold-wall ultra-high-vacuum (UHV)/CVD conditions is described. By using this technology, a self-aligned SiGe HBT with selective epitaxial base is realized. This technology also makes possible the void-free selective growth of SiGe/Si epitaxial layers on Si under polysilicon with overhanging structure, as well as on the open region. As for the transistor characteristics, h/sub FE/ of 100 and BV/sub CEO/ of 5.0 V were obtained.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>