IEEE Journal of Solid-State Circuits · 2001 · 61 citations · 6 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyFeedback AmplifiersOptical Communication SystemsPhotodetectorsReceiver SystemsBicmos TechnologyBit Error RateBit-error Rate AnalysisPhotodiode CircuitsSensitivitySilicon PhotodiodesTransimpedance Amplifier DesignTransimpedance Amplifiers
A transimpedance amplifier packaged with an InP p-i-n photodiode has been demonstrated for 10-Gb/s SONET receiver. The shunt feedback transimpedance amplifier is fabricated in 0.25-/spl mu/m modular Si BiCMOS technology. The transimpedance of 55 dB/spl Omega/ is achieved at a bandwidth of 9 GHz by applying shunt peaking and filter termination at the input. The optical sensitivity of -17 dBm was measured at 10 Gb/s for a bit-error rate of 10/sup -12/.
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