Organic Complementary Logic Circuits and Volatile Memories Integrated on Plastic Foils

Abstract

This paper presents organic based logic and memory circuits. All those circuits are made with organic N- and P-type transistors. Organic complementary nand and nor gates were characterized and show performance equivalent to or better than the literature-reported ones. The presented memory circuits include an SRAM memory point and an edge-triggered flip-flop. The flip-flop is made of six organic two-input and three-input nand gates, representing a total of 26 organic transistors for a surface of 170 <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">${\rm mm}^{2}$</tex></formula> . The maximum operating frequency of this flip-flop is 220 Hz under a supply of <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">${\pm}{\rm 20}~{\rm V}$</tex></formula> . All the circuits were manufactured using a standard organic sheet-to-sheet process in ambient air. Electrical characteristics remain identical after repeated measurements. Finally, a model matching the presented circuits' behavior was carried out, permitting the design of more complex circuits.