Sublimation growth of bulk crystals of AlN‐rich (AlN)<sub>x</sub>(SiC)<sub>1–x</sub> solid solutions

Matthias Bickermann, Octavian Filip, Boris M. Epelbaum, Paul Heimann, A. Winnacker

Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2010 · 17 citations · 1 references

Concepts

Abstract

Abstract (AlN) x (SiC) 1–x bulk single crystals are prepared by sublimation growth employing an AlN source placed in a tantalum carbide container. A 6H ‐SiC substrate acts both as seed and as source for silicon and carbon species. As the growth temperature is increased from 1900°C to 2050°C or the seed surface orientation is changed from (01 1 5) to (0001), crystal coloration changes from yellowish to greenish to blackish. We attribute the change in coloration to an increasing Si/C content in the samples and estimate that up to 10% at of Si and C are incorporated. Accompanying changes in below band‐gap optical absorption and cathodoluminescence are discussed. (© 2010 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)

References

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