Direct extraction of the series equivalent circuit parameters for the small-signal model of SOI MOSFETs

Abstract

A new extraction scheme is proposed which allows to determine all the series equivalent circuit elements values from S-parameters measurements at a single bias point in saturation. Exploiting the specific shape of a set of impedance loci, the new scheme uses linear regression techniques to solve the extraction problem. The resulting algorithm is very simple and efficient when compared to optimizer-driven approaches.