Tuning the influence of metal nanoparticles on ZnO photoluminescence by atomic‐layer‐deposited dielectric spacer

Abstract

Abstract There is increasing interest in tuning the optical and optoelectronic properties of semiconductor nanostructures using metal nanoparticles in their applications in light‐emitting and detection devices. In this work we study the effect of a dielectric Al 2 O 3 gap layer (i.e., spacer) on the interaction of ZnO nanowires with metal nanoparticles. The Al 2 O 3 spacer thickness is varied in the range of 1–25 nm using atomic layer deposition (ALD) in order to tune the interaction. It is found that ~5 nm is an optimum spacer thickness common for most metals, although the enhancement ratio of the near‐bandedge emission differs among the metals. Consistent results are obtained from both photoluminescence (PL) and cathodoluminescence (CL) spectroscopies, with the latter being applied to the optical properties of individual semiconductor/metal nanoheterostructures. The interaction is primarily proposed to be related to coupling of ZnO excitons with local surface plasmons of metals, although other mechanisms should not be ruled out.