Capacitance reconstruction from measured C-V in high leakage, nitride/oxide MOS

Abstract

A reconstruction technique of the gate capacitance from anomalous capacitance-voltage (C-V) curves in high leakage dielectric MOSFETs is presented. An RC network is used to accommodate the distributed nature of MOSFETs and an optimization technique is applied to extract the intrinsic gate capacitance. Applicability of the method is demonstrated for ultra-thin nitride/oxide (N/O /spl sim/1.4 nm/0.7 nm) composite dielectric MOSFETs.