Journal of Lightwave Technology · 1992 · 18 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesDevice ReliabilityIii-v SemiconductorsOptoelectronic DevicesOptoelectronic MaterialsSemiconductor LasersSemiconductor ReliabilityActivation EnergyAmbient Temperature EffectsGallium Nitride Light-emitting DiodesHeterostructure LasersModulation DepthSingle-mode FibersSingle-mode OperationSuperluminescent Diodes
The performance and reliability of a 1.3- mu m superluminescent diode (SLD) with a novel structure are reported. A window structure with a tapered active layer is applied to suppress lasing oscillation. A V-groove structure is introduced to achieve high coupling efficiency into a single-mode fiber. The design of optimized device dimensions allows SLD operation to be obtained even at 0 degrees C. 1.3 mW is coupled into a single-mode fiber at 150 mA and 25 degrees C. The spectral modulation depth is 15% over the entire emission spectral width of 32 nm. The operating life of a SLD has been estimated from the results of accelerated aging carried out for 5000 h at the ambient temperatures of 50 and 125 degrees C. The activation energy of degradation is estimated to be 0.58 eV, and the extrapolated life is 10/sup 6/ h at an ambient temperature of 25 degrees C.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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High-power 1.3 μm superluminescent diode
N. Kwong, N. Bar-Chaim, Tirong Chen · Applied Physics Letters · 1989 · 27 citations