High-power, high-efficiency 1.3 μm superluminescent diode with a buried bent absorbing guide structure

Abstract

A superluminescent diode (SLD) operating in the 1.3 μm wavelength region has been fabricated by the liquid phase epitaxial growth technique. Lasing is effectively suppressed by incorporating an unpumped buried bent guide structure for SLD operation. Devices with an antireflection coating on the front facet emit a high optical power of 11.5 mW at an injection current of dc 200 mA. The Fabry–Perot mode has been sufficiently suppressed over the entire emission spectral bandwidth of 40 nm. The transverse mode is stable and a beam divergence of 48°×33° has been achieved. A coupling power of 1 mW was achieved for the 1.9% Δn, and 2.8-μm-diam core single-mode fiber by butting.