A 0.5 V Receiver in 90 nm CMOS for 2.4 GHz Applications

Nebojša Stanić, Ajay Balankutty, Peter R. Kinget, Y. Tsividis

Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium · 2007 · 10 citations · 10 references

Concepts

Abstract

We report an ultra-low voltage RF receiver for applications in the 2.4 GHz band, designed in a 90 nm CMOS technology. The sliding-IF receiver prototype includes an LNA, an image-reject LC filter with single-ended to differential conversion, an RF mixer, an LC IF filter, a quadrature IF mixer, RF and IF LO buffers, and an I/Q baseband section with a VGA and a low-pass channel-select filter in each path, all integrated on-chip. It has a programmable overall gain of 30 dB, noise figure of 18 dB, out-of-channel IIP3 of -22 dBm, and 26 dB of on-chip image rejection. The 3.4 mm2 chip consumes 8.5 mW from a 0.5 V supply.

References

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