Ar+ laser induced chemical vapor deposition of Si from SiH4

Abstract

For the first time polycrystalline silicon has been grown by using the visible light of an Ar+ laser for pyrolytical decomposition of SiH4. With a laser irradiance of 3600 W/mm2 a deposition rate of 30 μm/s was obtained. The temperature dependence of the deposition rate was investigated. The kinetically controlled regime is characterized by an activation energy of 44±4 kcal/mole.