Proof of Ge-interfacing Concepts for Metal/High-k/Ge CMOS - Ge-intimate Material Selection and Interface Conscious Process Flow

Abstract

GeO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Ge and high-k(LaYO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> )/Ge interfaces have been significantly improved by suppressing GeO desorption and treating Ge surface with radical nitrogen. With the Ge- intimate material selection and interface conscious process flow, we have achieved that the peak hole mobility of PtGe source/drain p-MOSFET is about 370 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vsec in FUSI/GeO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Ge. Furthermore, metal/n-Ge ohmic characteristic has been achieved by inserting ultra-thin GeO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> layer between metal and Ge, which enables us to operate metal source/drain Ge n-MOSFETs for the first time.