IEEE Electron Device Letters · 1999 · 81 citations · 3 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSurface ScienceComplementary Metal-oxide-semiconductor TechnologyMetal-oxide-semiconductor Field-effect TransistorsMetal-semiconductor ContactsOxide SemiconductorsQuantum TunnelingTunnelingCarrier Tunneling Across InterfacesCharge PumpingGate Oxide InterfacesInterface Trap DensityInterface Trap ModelingInterface Trap StatesTunneling CurrentTunneling Phenomena
A simple method is described for separating the charge pumping current from the parasitic tunneling component in a charge pumping measurement performed on MOS transistors with ultrathin (<2 nm) gate oxide thickness. The method is presented here for a two-level charge pumping signal and can be used to significantly increase the accuracy of the technique to extract interface trap parameters in tunnel MOS devices.
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