On the tunneling component of charge pumping current in ultrathin gate oxide MOSFETs

Abstract

A simple method is described for separating the charge pumping current from the parasitic tunneling component in a charge pumping measurement performed on MOS transistors with ultrathin (<2 nm) gate oxide thickness. The method is presented here for a two-level charge pumping signal and can be used to significantly increase the accuracy of the technique to extract interface trap parameters in tunnel MOS devices.