Charge transfer and “band lineup” in molecular electronic devices: A chemical and numerical interpretation

TLDR

The study presents first‑principles calculations of charge transfer and band lineup in a phenyldithiolate–gold molecular device, and discusses implications for molecular‑scale device engineering. Using local‑spin‑density‑functional theory with a Gaussian basis, the authors model a phenyldithiolate molecule bridging gold electrodes, showing that charge transfer raises the electrostatic potential, alters molecular energy levels, and the self‑consistent interaction with metal states sets the level lineup relative to the Fermi level. The calculations reveal significant charge transfer from gold to the phenyldithiolate molecule, indicating a partially ionic sulfur–gold bond localized at the interface.

Abstract

We present first-principles based calculation of charge transfer and “band lineup” in molecular electronic devices using as an example the device formed by a phenyldithiolate molecule bridging two gold electrodes and local-spin-density-functional theory with a Gaussian-type orbital basis. We show that significant charge transfer from the metal to the molecule occurs, reflecting the partially ionic character of the sulfur–gold bond and localized in the interfacial region. Such charge transfer increases the electrostatic potential in the molecule which changes the molecular energy level structures. The interaction between the molecular orbitals under the self-consistent potential and the surface metal states determines the lineup of molecular levels relative to the metal Fermi level. We also discuss the implications of our work on device engineering at the molecular scale.