Triazidogallium and Derivatives: New Precursors to Thin Films and Nanoparticles of GaN

Abstract

Abstract The synthesis and properties of [Ga(N 3 ) 3 ] ∞ ( 1 ) and the related derivatives [(Do) n Ga(N 3 ) 3 ] ( 2a‐d : Do = THF, NEt 3 , NMe 3 , quinuclidine, n = 1; 2e : Do = pyridine; n = 3), Li[(CH 3 )Ga(N 3 ) 3 ] ( 3 ), [(N 3 ) 2 Ga{(CH 2 ) 3 NMe 2 }] ( 4 ), [Cp(CO) 2 ‐Fe‐Ga(N 3 ) 2 (py)] ( 5 ), and [(CO) 4 Co‐Ga(N 3 ) 2 (NMe 3 )] ( 6 ) are reported. Compounds 2e and 4 were characterized by single‐crystal X‐ray diffraction. The deposition of polycrystalline GaN thin films from 2a‐e by solution methods (spin‐on pyrolysis) and the solid‐state pyrolysis of 1 to give GaN nanoparticles are described.