A Fully Integrated Ultra-Low Insertion Loss T/R Switch for 802.11b/g/n Application in 90 nm CMOS Process

Adil A. Kidwai, Chang-Tsung Fu, Jonathan C. Jensen, Stewart S. Taylor

IEEE Journal of Solid-State Circuits · 2009 · 44 citations · 6 references

Concepts

Abstract

A 30 dBm ultra-low insertion loss CMOS transmit-receive switch fully integrated with an 802.11b/g/n transceiver front-end is demonstrated. The switch achieves an insertion loss of 0.4 dB in transmit mode and 0.1 dB in receive mode. The entire receiver chain from antenna to baseband output achieves a measured noise figure of 3.6 dB at 2.4 GHz. The switch has a P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1dB</sub> greater than 30 dBm by employing a substrate isolation technique without using deep n-well technology. The switch employs a 1.2 V supply and occupies 0.02 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> of die area.

References

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