IEEE Transactions on Electron Devices · 2011 · 39 citations · 21 references
EngineeringElectrical EngineeringDigital ImagingSemiconductor DevicesSensorsCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyImage ProcessingImage SensorsLow-noise Circuit DesignSensor NoiseCmos Image SensorsComplementary Metal-oxide-semiconductor DevicesComplementary Metal-oxide-semiconductor Image SensorsCorrelated Double SamplingDouble SamplingGlobal ShutterMotion DetectionPixel Architecture
A complementary metal-oxide-semiconductor (CMOS) image sensor with low-noise global shuttering and a dual-shuttering mode is presented. The developed two-stage charge transfer pixel enables noise canceling by means of true correlated double sampling. The implemented prototype demonstrates for the first time that a noise level of less than three electrons can be achieved in a global-shutter CMOS image sensor while attaining high shutter efficiency of 99.7%. In the dual-shuttering mode, both a pinned storage diode signal and a floating diffusion signal are used for desirable functions such as wide-dynamic-range imaging, motion detection, and dual consecutive snapshot imaging.
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Mitsuhito Mase, Shoji Kawahito, Mamoru Sasaki et al. · IEEE Journal of Solid-State Circuits · 2005 · 186 citations
No image lag photodiode structure in the interline CCD image sensor
Nobukazu Teranishi, A. Kohono, Y. Ishihara et al. · 1982 · 164 citations