Wide intrascene dynamic range CMOS APS using dual sampling

Abstract

A CMOS active pixel sensor (APS) that achieves wide intrascene dynamic range using dual sampling is reported. A 64/spl times/64 element prototype sensor with dual output architecture was fabricated using a 1.2 /spl mu/m n-well CMOS process with 20.4 /spl mu/m pitch photodiode-type active pixels. The sensor achieves an intrascene dynamic range of 109 dB without nonlinear companding.