IEEE Photonics Technology Letters · 1993 · 45 citations · 16 references
EngineeringElectrical EngineeringOptoelectronicsPhotonicsSemiconductor DevicesDevice CharacterizationDevice ReliabilityLaser PhysicsNoise In Semiconductor DevicesSemiconductor LasersSemiconductor ReliabilityDegradationDegradation BehaviorDevice DegradationDistributed Feedback LasersLaser NoiseQuantum Well LasersQuantum Well StatesQuantum Well Structures
It is experimentally demonstrated that the increase in residual spectral linewidth during device degradation is due to an increase in 1/f noise in a multiple quantum-well (MQW) distributed-feedback (DFB) laser. The origin of 1/f noise and its influence on device characteristics is discussed and clarified by observing the degradation behavior of the spectral linewidth.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Theory of the linewidth of semiconductor lasers
C. H. Henry · IEEE Journal of Quantum Electronics · 1982 · 2.4K citations
Experimental studies on 1/f noise
F.N. Hooge, T.G.M. Kleinpenning, L.K.J. Vandamme · Reports on Progress in Physics · 1981 · 1.1K citations
1/ƒ noise is no surface effect
F.N. Hooge · Physics Letters A · 1969 · 1.1K citations