Japanese Journal of Applied Physics · 1987 · 12 citations · 4 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsCarrier TransportPhotovoltaic DevicesPhotovoltaic MaterialsSemiconductor PhysicsSolar Cell MaterialsSolar CellsAmorphous SiliconDead Layer EffectsDiffusion CoefficientsDopant DiffusionHydrogenated Amorphous SiliconPhotocurrent GenerationPhotovoltaic DegradationThermal Treatment
In glass/TCO/ p (a-SiC:H)- i - n /Cr type hydrogenated amorphous silicon solar cells fabricated by a rf glow-discharge decomposition method, it was observed that the photocurrent in the short-wave length region mainly decreased after a thermal treatment of the sample. In terms of a simple model in which the dopant diffusion makes a dead layer near the p / i interface, the phenomenon of the photocurrent decrease is discussed. The dopant diffusion coefficients and the lifetimes of the solar cells were estimated.
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