Heavy ion-induced charge collection mechanisms in CMOS active pixel sensor

Abstract

The CMOS active pixel sensors (APSs) can easily be designed for specific applications. Charge collection measurements have been achieved under heavy ion, alpha, and laser exposures on APS test die. The obtained results allow us to determinate the parameters to modify in order to design detectors dedicated to the detection of the space environment ionizing particles. Modeling of alpha exposure on APS complete this work. All these results demonstrate the important role of heavy ion-induced charge diffusion in APSs space applications.