On the determination of source and drain series resistances of MESFET's

Abstract

Based on an implicit analytic solution of current transport equations applicable to a forward-biased Schottky barrier or junction-gate FET's with open drain, universal curves for three α-factors have been generated. These factors determine the channel resistance contributions to the device terminal dc and ac resistances. By measuring these resistances the values of the channel, source, and drain resistances have been determined.