2012 · 48 citations · 5 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIii-v SemiconductorsMicrowave AmplifiersMicrowave Semiconductor DevicesPower AmplifiersWide-bandgap Semiconductor DevicesBalanced AmplifiersGallium Nitride Microwave Integrated CircuitsGallium Nitride Power AmplifiersGan-based High-frequency DevicesHigh-efficiency Power AmplifiersPower Amplifier DesignPower OutputRadio Frequency Power Amplifiers
The design and performance of two high efficiency Ka-band power amplifier MMICs utilizing a 0.15µm GaN HEMT process technology is presented. Measured in-fixture continuous wave (CW) results for the 3-stage amplifiers demonstrates 8–9W of output power for the balanced MMIC and 4.5–6W for the single-ended configuration. The associated power added (PAE) efficiency of both amplifiers exceeds 25% at Ka-band. The die sizes for the balanced and single-ended MMICs are 2.55×3.80mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and 1.39×3.42mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> respectively.
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GaN MMIC technology for microwave and millimeter-wave applications
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