Plasma-enhanced chemical vapor deposition of silicon, germanium, and tin nitride thin films from metalorganic precursors

Abstract

Nearly stoichiometric silicon, germanium, and tin nitride thin films were deposited from the corresponding homoleptic dimethylamido complexes M (NMe2)4 (M=Si, Ge, Sn; Me=CH3), and an ammonia plasma at low substrate temperatures (<400 °C). Tin nitride films were also deposited from Sn (NMe2)4 and ammonia without plasma activation. The films showed little (<few at. %) or no carbon or oxygen contamination. The barrier properties of the silicon and germanium nitride films were evaluated by using backscattering spectrometry. Homoleptic dimethylamido silicon and germanium compounds are attractive alternatives to silane and germane for use in the plasma-enhanced chemical vapor deposition of nitride thin films.