PMTJ driven STT MRAM with 300mm process

Abstract

We will present high performance/low-cost spin transfer torque magnetic random access memory (STT-MRAM) solution based upon 64Mb chip data and scalable magnetic tunneling junction (MTJ) BEOL integration scheme at 55 nm process node. This is the first fully functional STT-MRAM chip fabricated in a top tier foundry using the standard 300 mm CMOS foundry process. We will characterize pMTJ device population performance and provide in-depth analysis of pMTJ driven STT-MRAM technology extendibility. The manufacturability and various applications of STT-MRAM will also be discussed.