In-Situ Measurement of Supply-Noise Maps With Millivolt Accuracy and Nanosecond-Order Time Resolution

Abstract

An in situ measurement scheme for generating supply-noise maps, which can be conducted while running applications in product-level LSIs, was developed. The design of the on-chip voltage sampling probe is based on a simple ring oscillator, which converts local supply difference between VDD and V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SS</sub> to oscillation-frequency deviation. High measurement accuracy is achieved by off-chip digital signal processing and calibration. This scheme was used to successfully measure 69-mV local supply noise with 5-ns time resolution in a 3G-cellular-phone processor. It will thus help in designing power-supply networks and in visually verifying the quality of a power supply