High-voltage Millimeter-Wave GaN HEMTs with 13.7 W/mm Power Density

Abstract

Short-gate-length GaN HEMTs with advanced features including a field plate and an InGaN back-confinement barrier showed excellent I-V characteristics at high voltages. A 0.4-mm wide device with 0.15-mum gate and 0.25-mum field plate operated up to 60 V and achieved 13.7 W/mm power density at 30 GHz, the highest for a FET at millimeter-wave frequencies.