IEEE Transactions on Microwave Theory and Techniques · 2006 · 18 citations · 13 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesDevice CharacterizationHigh-frequency Semiconductor DevicesImpedance MatchingMicrowave MeasurementsMicrowave Semiconductor DevicesPower AmplifiersClass Ab AmplifiersClass Ab BiasingClass Ab Power AmplifiersPower Added EfficiencyPower Amplifier NonlinearityPower EfficiencyPower OutputRadio Frequency Power Amplifiers
An original measurement system for nonlinear RF power-transistor characterization is presented. This new setup enables measurement and optimization of output power, power-added efficiency (PAE), or linearity using active fundamental tuning and six-port reflectometers as vector network analyzers. High- and low-frequency bias-tees are inserted at both ports of transistors in order to control source and load impedances at the baseband (envelope) frequency. Experimental results at 1.575 GHz show an adjacent channel power ratio improvement of 20 dB for a commercial GaAs MESFET power transistor operating in class AB. Moreover, the output power and PAE are increased by 1 dB and ten points, respectively
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