Comparative Study of Laser Induced Damage in Silicon Wafers

Abstract

In this paper we present different possibilities like QSSPC lifetime measurements, X-ray diffraction and defect etch to measure laser induced damage in silicon wafers. The lifetime measurement results of the laser chemical etching (LCE), Laser Micro Jettrade (LMJ) and a standard laser are plotted in a diagram. Furthermore the defect etch investigation was done with Yang etch and the etch pits are analyzed with scanning electron microscopy. In order to show the advantage of the waterjet guided laser and accordingly of LCE, we compare the LMJ/LCE laser grooves with a standard Nd:YAG scanning laser system for each method