IEEE Electron Device Letters · 2005 · 16 citations · 12 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave Integrated CircuitsMicrowave MixersMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsGaas Monolithic Microwave Integrated CircuitsHigh-electron-mobility TransistorsIntegrated Circuit MixersMillimeter-wave Integrated CircuitsMixersMonolithic Microwave Integrated Circuit DesignMonolithic Microwave Integrated Circuit MixersMonolithic Microwave Integrated Circuits
We report high switching performance of 0.1-μm metamorphic high-electron mobility transistors (HEMTs) for microwave/millimeter-wave monolithic integrated circuit (MMIC) resistive mixer applications. Very low source/drain resistances and gate capacitances, which are 56 and 31% lower than those of conventional pseudomorphic HEMTs, are due to the optimized epitaxial and device structure. Based on these high-performance metamorphic HEMTs, a 94-GHz MMIC resistive mixer was designed and fabricated, and a very low conversion loss of 8.2 dB at a local oscillator power of 7 dBm was obtained. This is the best performing W-band resistive field-effect transistor mixer in terms of conversion loss utilizing GaAs-based HEMTs reported to date.
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