Characteristics of narrow-channel polysilicon thin-film transistors

Abstract

The effect of channel width on the characteristics of polysilicon thin-film transistors (TFTs) was investigated. n-channel TFTs with a channel length L of 20 mu m and a channel width W ranging from 20 to 0.5 mu m were fabricated and characterized. The most prominent effect of reducing the TFT channel was found to be a drastic decrease in threshold voltage when W was reduced to less than 5 mu m. This decrease was found to be correlated with the decrease in grain-boundary trap density.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>